Large area x-ray image sensing using a PbI2 photoconductor

被引：30

作者：

Street, R ^{[1
]}

Shah, K ^{[1
]}

Ready, S ^{[1
]}

Apte, R ^{[1
]}

Bennett, P ^{[1
]}

Klugerman, M ^{[1
]}

Dmitriyev, Y ^{[1
]}

机构：

[1] Xerox PARC, Palo Alto, CA 94304 USA

来源：

PHYSICS OF MEDICAL IMAGING | 1998年 / 3336卷

关键词：

PbI2; photoconductor; amorphous silicon; pixel array; radiographic medical imaging;

D O I：

10.1117/12.317027

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

We report the fabrication and evaluation of a Pbl(2) imager using large area amorphous silicon technology. This approach uses a thick Pbl(2) x-ray photoconductor to absorb x-rays and collect ionization charge under the action of an applied field, while amorphous silicon thin film transistors (TFT) provide a matrix-addressed read out of the signal to external electronics. The x-ray sensitivity of Pbl(2) is high, and mobility-lifetime product is large enough to yield a high charge collection at low applied fields. The test arrays used to evaluate Pbl(2) have 256x256 pixels of size 200 microns. Each pixel contains an amorphous silicon switching transistor, gate and data addressing lines, a charge storage capacitor and a metal pad to contact the Pbl(2) layer. Early evaluation of the image sensor indicates the promise of Pbl(2), but indicates that reduction of the leakage current is important.

引用

页码：24 / 32

页数：9