Impedance analysis of surface modified Ga0.5In0.5P - Aqueous electrolyte interface

被引:17
作者
Kocha, SS
Turner, JA
机构
[1] National Renewable Energy Laboratory, Photoconversion Branch, Golden, CO 80401
关键词
Ga0.5In0.5P; impedance; semiconductor; interphase; flat band;
D O I
10.1016/0013-4686(95)00450-5
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
In this work electrochemical impedance spectroscopy was carried out on pre- and post-etched Ga0.5In0.5P (1.8-1.9 eV) as well as quinolinol-modified surfaces, over seven decades of frequencies. The spectra were examined in the Bode as well as complex impedance planes and deconvoluted using nonlinear-least-squares fitting to obtain equivalent circuits that isolated the space charge from the surface states. Chemical wet-etching of Ga0.5In0.5P was found to remove surface states as evidenced in the removal of the low frequency time constant from the spectra. Treatment with 8-quinolinol was found to shift the flat-band potential in the positive direction vs. she by about 300 mV in near neutral electrolytes.
引用
收藏
页码:1295 / 1304
页数:10
相关论文
共 20 条
[1]   BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE [J].
ALLONGUE, P ;
CACHET, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :45-52
[2]   SOLAR SPECTRUM AT TYPICAL CLEAR WEATHER DAYS [J].
BOER, KW .
SOLAR ENERGY, 1977, 19 (05) :525-538
[3]  
BOUKAMP BA, 1986, SOLID STATE IONICS, V20, P3144
[4]  
Damjanovic A., 1966, ELECTROCHIM ACTA, V11, P791, DOI [DOI 10.1016/0013-4686(66)87056-1, 10.1016/0013-4686, DOI 10.1016/0013-4686, 10.1016/0013-4686(66)87056-1]
[5]   INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2 [J].
DUTOIT, EC ;
VANMEIRHAEGHE, RL ;
CARDON, F ;
GOMES, WP .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1975, 79 (12) :1206-1213
[6]   OXYGEN ELECTROCATALYSIS ON SOME OXIDE PYROCHLORES [J].
HOROWITZ, HS ;
LONGO, JM ;
HOROWITZ, HH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1851-1859
[7]   STUDY OF THE SCHOTTKY-BARRIER AND DETERMINATION OF THE ENERGETIC POSITIONS OF BAND EDGES AT THE N-TYPE AND P-TYPE GALLIUM INDIUM-PHOSPHIDE ELECTRODE-ELECTROLYTE INTERFACE [J].
KOCHA, SS ;
TURNER, JA ;
NOZIK, AJ .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1994, 367 (1-2) :27-30
[8]   DISPLACEMENT OF THE BANDEDGES OF GALNP(2) IN AQUEOUS-ELECTROLYTES INDUCED BY SURFACE MODIFICATION [J].
KOCHA, SS ;
TURNER, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (08) :2625-2630
[9]   INVESTIGATION OF CHEMICAL WET-ETCH SURFACE MODIFICATION OF GA0.5IN0.5P USING PHOTOLUMINESCENCE, X-RAY PHOTOELECTRON-SPECTROSCOPY, CAPACITANCE MEASUREMENTS, AND PHOTOCURRENT-VOLTAGE CURVES [J].
KOCHA, SS ;
PETERSON, MW ;
NELSON, AJ ;
ROSENWAKS, Y ;
ARENT, DJ ;
TURNER, JA .
JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (02) :744-749
[10]  
KOLTHOFF IM, 1969, QUANTITATIVE CHEM AN