Electron-phonon scattering rates in GaAs/AlGaAs 2DEG samples below 0.5 K

被引：36

作者：

Mittal, A

Wheeler, RG

Keller, MW

Prober, DE

Sacks, RN

机构：

[1] YALE UNIV, DEPT PHYS, NEW HAVEN, CT 06520 USA

[2] UNITED TECHNOL RES CTR, E HARTFORD, CT 06108 USA

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(96)00464-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have studied electron heating in a 2DEG in GaAs/AlGaAs heterojunctions below 0.5 K. The electron temperature was raised above the lattice temperature using Joule heating. Weak localization and the temperature-dependent sample resistance were used as thermometers for the electrons. The electron-phonon energy relaxation rate was found to be proportional to T-3. We find that the relaxation rate increases with disorder in the system.

引用

页码：537 / 541

页数：5

共 12 条

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[Anonymous], ZH EKSP TEOR FIZ+

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