Low temperature growth of rutile TiO2 films in modified rf magnetron sputtering

被引：97

作者：

Okimura, K ^{[1
]}

机构：

[1] Tokai Univ, Dept Elect, Kanagawa 2591292, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2001年 / 135卷 / 2-3期

关键词：

modified magnetron sputtering; rutile TiO2; low temperature growth; high refractive index; incident ion analysis;

D O I：

10.1016/S0257-8972(00)00999-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low temperature (less than or equal to 300 degreesC) growth of rutile TiO2 films with high refractive index which is equal to bulk TiO2 crystal was achieved by using a modified sputtering method. Depositions were carried out in rf magnetron sputtering apparatus equipped with an auxiliary permanent magnet just under the grounded electrode. The as-deposited films showed rutile polycrystalline structure and fine surface morphology indicating higher densification. Remarkable changes in composition, total current and energy of incident ions were presented at a Ar-O-2 total pressure of 2.7 Pa. The rutile phase grows in a modified sputtering method in contrast with anatase phase growth in conventional sputtering apparatus. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：286 / 290

页数：5

共 21 条

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