Negative-type chemically amplified resists for ArF excimer laser lithography

被引：11

作者：

Naito, T ^{[1
]}

Takahashi, M ^{[1
]}

Ohfuji, T ^{[1
]}

Sasago, M ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, Totsuka Ku, Yokohama, Kanagawa 244, Japan

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

negative type; chemically amplified resist; epoxide; anhydride; acrylic acid; ArF excimer laser;

D O I：

10.1117/12.312364

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new negative resist consisting of an anhydride, an acrylic acid, an epoxy crosslinker and a photoacid generator is introduced. In the exposed area, the epoxy groups of the crosslinker react with anhydride groups and/or carboxylic acids in the polymer under existence of photogenerated acid as a catalyst during post exposure baking (PEB). A 0.20 mu m pattern was resolved by an ArF exposure at a dose of 28 mJ/cm(2).

引用

页码：503 / 511

页数：3