Enhanced infrared response of Si base p-n diode with self-assembled Ge quantum dots by thermal annealing

被引：12

作者：

Cai, Qijia ^{[1
]}

Zhou, Hao ^{[1
]}

Lu, Fang ^{[1
]}

机构：

[1] Fudan Univ, Adv Mat Lab, Surface Phys Lab, Shanghai 200433, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 11期

关键词：

quantum dots; thermal annealing; Raman spectra; PL spectra;

D O I：

10.1016/j.apsusc.2007.11.019

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of thermal annealing in Si base p-n diode with self-assembled Ge dots stacked in eight layers structure are investigated. The effects of annealing are discussed based on the photovoltage spectra, the PL spectra and the Raman spectra. Three main effects occur after thermal annealing: the reduction of point defects, the intermixing of Si-Ge and the strain relaxation. The experimental result shows that 800 degrees C might be a suitable annealing temperature for photovoltaic applications. (c) 2007 Elsevier B. V. All rights reserved.

引用

页码：3376 / 3379

页数：4

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