Thin-film field-effect transistors based on La-doped SrTiO3 heterostructures

被引：20

作者：

Pan, F ^{[1
]}

Olaya, D ^{[1
]}

Price, JC ^{[1
]}

Rogers, CT ^{[1
]}

机构：

[1] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.1651647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Field-effect transistors have been fabricated from epitaxial perovskite strontium titanate heterostructures. Lanthanum-doped SrTiO3 was used as the semiconducting channel while insulating SrTiO3 was used as a gate insulator. Both depletion and accumulation effects in the channel have been studied from 300 to 4 K. Hall effect measurements indicate a temperature independent n-type carrier density around 5x10(19) cm(-3). At 300 K, typical mobilities are 2-3 cm(2) V-1 s(-1) while low temperature mobilities are as high as 15 cm(2) V-1 s(-1). (C) 2004 American Institute of Physics.

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页码：1573 / 1575

页数：3

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