Structural- and electronic-property investigations on metal-doped beta-rhombohedral boron

被引:24
作者
Matsuda, H
Tanaka, N
Nakayama, T
Kimura, K
Murakami, Y
Suematsu, H
Kobayashi, M
Higashi, I
机构
[1] UNIV TOKYO,DEPT PHYS,TOKYO 113,JAPAN
[2] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN
关键词
fullerenes; semiconductors; electrical conductivity; electronic structure;
D O I
10.1016/0022-3697(95)00417-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here we investigate on the possibility of metal transition upon V and Ni doping into beta-rhombohedral boron (beta-rh. B). For V-doped beta-rh. B, DC conductivity sigma and Pauli paramagnetic shift chi(0) monotonously increase with increasing V concentration, suggesting that metal transition may occur by further V doping. Interestingly enough, however, at the highest Ni concentration (Ni4.5B105 phase), sigma and chi(0) decrease again, such that Ni-doped beta-rh. B reverts back to an insulator. For these properties, filling of intrinsic acceptor states comprised of B-12 icosahedral clusters and possibility of metal transitions of beta-rh. B is discussed.
引用
收藏
页码:1167 / 1174
页数:8
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