Atomic structure of monatomic S-B steps on clean Si(001) and Ni-contaminated Si(001)

被引：10

作者：

Koo, JY

Yi, JY

Hwang, C

Kim, DH

Lee, S

Cho, J

机构：

[1] KOREA RES INST STAND & SCI,TAEJON 305600,SOUTH KOREA

[2] KWANGWOON UNIV,NOWON KU,SEOUL 136701,SOUTH KOREA

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.54.10308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The atomic structure at monatomic-height S-B steps on clean Si(001) and a Ni-contaminated Si(001) was investigated using high-resolution scanning tunneling microscopy at room temperature. Rebonded S-B steps are dominant on clean Si(001). Nonrebonded S-B steps with split-off dimers are favored on the Ni-contaminated Si(001) and in the vicinity of dimer vacancies on clean Si(001). The nonrebonded step with the split-off dimer is generated by the strain due to dimer vacancies. A buckled dimer was observed in the vicinity of a kink of S-B step edges an clean Si(001).

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页码：10308 / 10311

页数：4

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