Cu-related complexes in silicon

被引：9

作者：

Estreicher, SK ^{[1
]}

Hastings, JL ^{[1
]}

机构：

[1] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 58卷 / 1-2期

关键词：

theory; copper; copper-acceptor pairs; gettering;

D O I：

10.1016/S0921-5107(98)00289-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hartree-Fock calculations of Cu+ in Si are performed in clusters containing 44-100 Si atoms. The configurations studied include interstitial and substitutional Cu+, copper-acceptor pairs, and copper-hexavacancy complexes. The preliminary results presented below include equilibrium configurations, electronic structures, and binding energies. (C) 1999 Elsevier Science S.A. All rights reserved.

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页码：155 / 158

页数：4

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