Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures

被引：44

作者：

Berthold, A ^{[1
]}

Jakoby, B ^{[1
]}

Vellekoop, MJ ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, Elect Instrumentat Lab, NL-2600 GA Delft, Netherlands

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 68卷 / 1-3期

关键词：

low-temperature bonding; fusion bonding; oxide-to-silicon bonding;

D O I：

10.1016/S0924-4247(98)00028-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a silicon wafer-to-wafer bonding process is presented where silicon dioxide is used as an intermediate layer. Because the process temperature is very low (120 degrees C) and because the chemical treatment of the surface before bonding does not damage aluminium patterns, wafers containing electronic circuity can be bonded. The oxide laver gives an electrical insulation between the two wafers. High bond strengths (over 20 MPa) are obtained. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：410 / 413

页数：4

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