Improved CdZnTe detectors grown by vertical Bridgman process

被引：11

作者：

Lynn, KG ^{[1
]}

Weber, M ^{[1
]}

Glass, HL ^{[1
]}

Flint, JP ^{[1
]}

Szeles, C ^{[1
]}

机构：

[1] Washington State Univ, Dept Phys, Pullman, WA 99164 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gamma ray (Co-57) and a particle (Am-241) detector response of Cd1-xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Postgrowth processing was utilized to produce a high-resistivity material with improved charge-collection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the low-energy tailing of the gamma-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV gamma-photon line in crystals with x=0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from Co-57 was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

引用

页码：229 / 238

页数：10