Nitrogen effusion and self-diffusion in Ga14N/Ga15N isotope heterostructures

(GaN)-N-14/(GaN)-N-15/(GaN)-N-14 isotope heterostructures are used to study nitrogen self-diffusion by secondary-ion mass spectrometry and thermally activated decomposition. After interdiffusion of (GaN)-N-14 and (GaN)-N-15 layers at temperatures between 770 degrees C and 970 degrees C the diffusion profiles are measured. The isotope heterostructures are particularly well suited for self-diffusion studies because the diffusion takes place at the interface inside the GaN crystal, and therefore the analysis is free from perturbations such as surface electric fields, mechanical stress or chemical potential gradients. The temperature dependence of the nitrogen self-diffusion coefficient (D) in hexagonal GaN was determined to be 1600 cm(-2) s(-1) exp [(-4.1. +/- 0.4) eV/k(B)T], leading to a self-diffusion entropy S-SD of about 10k(B). The nitrogen Bur through an isotope interface is compared with the nitrogen loss from a free GaN surface in vacuum above the decomposition temperature, to obtain information about the diffusion kinetics relevant for epitaxial growth and high temperature device applications.