Electrical properties of metal-ferroelectric-semiconductor structures based on ferroelectric polyvinylidene fluoride (PVDF)

被引：6

作者：

Kim, Jeong-Hwan ^{[1
]}

Kim, Joo-Nam ^{[1
]}

Park, Byung-Eun ^{[1
]}

机构：

[1] Univ Seoul, Dept Elect & Comp Engn, Seoul 130743, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2007年 / 51卷 / 02期

关键词：

PVDF; sol-gel; MFS; GV; memory window width;

D O I：

10.3938/jkps.51.723

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

PVDF (polyvinylidene fluoride) thin film having a beta phase was prepared by using sol-gel method. The film's properties were studied to evaluate the possibility of use in a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of An electrodes. The C-V (capacitance-voltage) measurements revealed that the Au/PVDF/Si structure with a 7 wt% film had a memory window width of about 1.8 V for a bias voltage sweep of 4 V.

引用

页码：723 / 726

页数：4

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