AlN/GaN and AlGaN/GaN heterostructures grown by HVPE on SiC substrates

被引：11

作者：

Melnik, YV ^{[1
]}

Nikolaev, AE ^{[1
]}

Stepanov, SI ^{[1
]}

Zubrilov, AS ^{[1
]}

Nikitina, IP ^{[1
]}

Vassilevski, KV ^{[1
]}

Tsvetkov, DV ^{[1
]}

Babanin, AI ^{[1
]}

Musikhin, YG ^{[1
]}

Tretyakov, VV ^{[1
]}

Dmitriev, VA ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

NITRIDE SEMICONDUCTORS | 1998年 / 482卷

关键词：

D O I：

10.1557/PROC-482-245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN, AIN and AlGaN layers were grown by hydride vapor phase epitaxy. BH-SiC wafers were used as substrates. Properties of AlN/GaN and AlGaN/GaN structures were investigated. AlGaN growth rate was about 1 mu m/min. The thickness of the AlGaN layers ranged from 0.5 to 5 mu m. The AlN concentration in AlGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence. Electrical measurements performed on AlGaN/GaN/SiC samples indicated that undoped AlGaN layers are conducting at least up to 50 mel. % of AlN.

引用

页码：245 / 249

页数：5