Anisotropy of the cyclotron mass in superlattices containing two populated minibands

被引:4
作者
Henriques, AB
Souza, PL
Yavich, B
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] Pontificia Univ Catolica Rio de Janeiro, Ctr Estudos Telecomunicacoes, BR-22453900 Rio De Janeiro, Brazil
关键词
D O I
10.1088/0268-1242/16/1/301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The cyclotron mass in periodically delta-doped InP was studied, using the temperature dependence of the Shubnikov-de Haas (SdH) effect in tilted magnetic fields. The samples had two populated minibands, E-1 and E-2, both of which contributed with oscillatory components to the SdH spectrum. When the magnetic field is tilted from the direction parallel to the axis of the superlattice, the cyclotron mass associated with E-1 electrons increases, as expected for a quasi-two-dimensional system. In contrast, the cyclotron mass of E-2 electrons decreases. This decrease is due to Bragg reflections of electrons by the superlattice, which lead to shorter orbits when the magnetic field is tilted. It is estimated that in periodically delta-doped semiconductors the cyclotron mass can decrease at most by a factor of three when the magnetic field is rotated by pi /2.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 23 条
[1]  
ASCHCROFT NW, 1981, SOLID STATE PHYSICS
[2]   BLOCH ELECTRONS IN A MAGNETIC FIELD [J].
BLOUNT, EI .
PHYSICAL REVIEW, 1962, 126 (05) :1636-&
[3]  
DROOPAD RA, 1989, SPRINGER SERIES SOLI, V87, P199
[4]   MULTISUBBAND ELECTRON-TRANSPORT IN DELTA-DOPED SEMICONDUCTOR SYSTEMS [J].
HAI, GQ ;
STUDART, N ;
PEETERS, FM .
PHYSICAL REVIEW B, 1995, 52 (11) :8363-8371
[5]   MAGNETIC BREAKDOWN IN PERIODICALLY SI-DOPED GAAS [J].
HENRIQUES, AB ;
MORGOON, VN ;
DESOUZA, PL ;
BINDILATTI, V ;
OLIVEIRA, NF ;
SHIBLI, SM .
PHYSICAL REVIEW B, 1994, 49 (16) :11248-11252
[6]   THEORETICAL INVESTIGATION OF THE PHOTOLUMINESCENCE AND FERMI-SURFACE OF PERIODICALLY DELTA-DOPED GAAS [J].
HENRIQUES, AB ;
GONCALVES, LCD .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) :585-589
[7]   Ionized impurity scattering in periodically delta-doped InP [J].
Henriques, AB ;
Goncalves, LCD ;
Oliveira, NF ;
Souza, PL ;
Yavich, B .
PHYSICAL REVIEW B, 1997, 55 (19) :13072-13079
[8]   TIGHT-BINDING MODEL FOR THE TRANSVERSE SHUBNIKOV-DE HAAS EFFECT IN SEMICONDUCTOR SUPERLATTICES [J].
HENRIQUES, AB .
PHYSICAL REVIEW B, 1994, 50 (12) :8658-8662
[9]   Quantum and transport mobilities in delta-doped semiconductors [J].
Henriques, AB .
PHYSICAL REVIEW B, 1996, 53 (24) :16365-16371
[10]   A STUDY OF THE CONDUCTION-BAND NONPARABOLICITY, ANISOTROPY AND SPIN SPLITTING IN GAAS AND INP [J].
HOPKINS, MA ;
NICHOLAS, RJ ;
PFEFFER, P ;
ZAWADZKI, W ;
GAUTHIER, D ;
PORTAL, JC ;
DIFORTEPOISSON, MA .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) :568-577