Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics

被引：19

作者：

Ellmers, C

Hofmann, MR

Karaiskaj, D

Leu, S

Stolz, W

Rühle, WW

Hilpert, M

机构：

[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Wissen Zentrum Mat Wissensch, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.123552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a vertical-cavity surface-emitting laser structure optimized for fast intrinsic emission dynamics, using the strain-compensated (GaIn)As/Ga(PAs) material system with a 2 lambda sin-type cavity. The high quality of the epitaxial growth is revealed by the large normal mode splitting of 10.5 meV found in reflectivity measurements. The fast dynamical response of our structure after femtosecond optical excitation at 30 K yields a pulse width of 3.2 ps and a peak delay of only 4.8 ps. A structure designed for laser emission at higher temperatures exhibits picosecond dynamics at room temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)00610-5].

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页码：1367 / 1369

页数：3

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