Transmission electron microscopy study of Si nanowires

被引：80

作者：

Zhou, GW

Zhang, Z

Bai, ZG

Feng, SQ

Yu, DP ^{[1
]}

机构：

[1] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China

[2] Beijing Univ, Dept Phys, Natl Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.121945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microstructures of Si nanowires (SiNW's) synthesized using laser ablation were investigated by transmission electron microscopy. The SiNW's have a high density of structural defects, which may play an important role in the formation of SiNW's and in the determination of the morphology of the nanowires. A model for the growth mechanism of the SiNW's was discussed on the basis of the observation. (C) 1998 American Institute of Physics. [S0003-6951(98)00527-0].

引用

页码：677 / 679

页数：3

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