Exciton photoluminescence of hexagonal ZnO

被引:58
作者
Butkhuzi, TV
Chelidze, TG
Georgobiani, AN
Jashiashvili, DL
Khulordava, TG
Tsekvava, BE
机构
[1] Tbilisi State Univ, Dept Phys, GE-380086 Tbilisi, Georgia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow, Russia
关键词
D O I
10.1103/PhysRevB.58.10692
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photoluminescence spectra of ZnO layers obtained by radical-beam epitaxy have been studied. Photoluminescence of free B and C excitons has been observed. At a high excitation level a band with lambda(max) = 363.1 nm is observed. It is explained in terms of the proposed photoluminescence polariton mechanism in the B-n = 1 exciton spectral region through biexcitons. [S0163-1829(98)08235-6].
引用
收藏
页码:10692 / 10695
页数:4
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