Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with decoupled confinement heterostructure

被引：3

作者：

Fujimoto, T ^{[1
]}

Yamada, Y ^{[1
]}

Oeda, Y ^{[1
]}

Okubo, A ^{[1
]}

Yamada, Y ^{[1
]}

Muro, K ^{[1
]}

机构：

[1] Mitsui Chem Inc, Elect & Informat Mat Lab, Sodegaura, Chiba 29902, Japan

来源：

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS III | 1998年 / 3285卷

关键词：

high power laser diode; AlGaAs laser diode; decoupled confinement heterostructure; index guided structure;

D O I：

10.1117/12.307594

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High Power GaAs/AlGaAs laser diodes with a decoupled confinement heterostructure (DCH) have been developed. This novel structure features broadened waveguide layers and thin carrier block layers sandwiching an active layer. Catastrophic optical damage (COD) level was twice as high as the corresponding separated confinement heterostructure (SCH) laser diode due to the improvement of mode profile. Al-content of cladding layers is greatly reduced in DCH laser diode without degrading temperature characteristics. The decrease of electrical and thermal resistivities allows high-power and high-efficiency operation. CW output, 4.6W was obtained with a 50 mu m-aperture 809nm DCH laser diode. The maximum efficiency was 49% at 2.8W. Life test was carried out over 2,000 hours under the conditions of 1.0W-50 degrees C. The median life was estimated to be more than ten thousand hours at this condition. Decoupled confinement heterostructure is advantageous for the fabrication of the index guided structure, since the reduction of chemically active Al-composition relieves the process difficulties related to the chemical etching and the selective re-growth. Index guided laser diode with a buried ridge structure presented 400mW single mode operation at 860nm. The life test was carried out under the conditions of 300mW-50 degrees C. All the 25 devices showed no failure up to 7,000 hours.

引用

页码：80 / 87

页数：8