Nanocrystalline diamond formation by using an inductively coupled radio-frequency CH4/H2/Ar plasma

被引：7

作者：

Ikada, R ^{[1
]}

Iizuka, S ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

来源：

关键词：

nanocrystalline diamond; diamond crystal; synthetic diamond; plasma CVD; ELECTRON-TEMPERATURE CONTROL; FILMS;

D O I：

10.1016/j.diamond.2004.12.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effect of gas-mixing ratio on the formation of nanocrystalline diamond has been investigated in a low electron temperature CH4/H-2/Ar plasma produced by inductively coupled rf discharge. The gas-mixing ratio is controlled by introducing an orifice between the plasma production region and the deposition region. When the diameter of the orifice is 6 mm, the Raman spectrum indicating a deposition of nanocrystalline diamond is observed when the gas-mixing ratio is less than similar to 0.03. The reduction of CH4 gas-mixing ratio is important for the formation of nanocrystalline diamonds. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：446 / 450

页数：5

共 12 条

[1]

Iizuka S, 2000, ELECTR ENG JPN, V130, P1, DOI 10.1002/(SICI)1520-6416(200001)130:1<1::AID-EEJ1>3.0.CO

[2]

2-R

[3] Production of high density and low electron-temperature plasma by a modified grid-biasing method using inductively coupled RF discharge [J].

Ikada, R ;

Nishimura, G ;

Kato, K ;

Iizuka, S .

THIN SOLID FILMS, 2004, 457 (01) :55-58

[4] ELECTRON-TEMPERATURE CONTROL FOR PLASMAS PASSING THROUGH A NEGATIVELY BIASED GRID [J].

KATO, K ;

IIZUKA, S ;

SATO, N .

APPLIED PHYSICS LETTERS, 1994, 65 (07) :816-818

[5] Electron temperature control by varying size of slits made in a grid [J].

Kato, K ;

Shimizu, T ;

Iizuka, S ;

Sato, N .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :547-549

[6] Sp2 bonding distributions in nanocrystalline diamond particles by electron energy loss spectroscopy [J].

Okada, K ;

Kimoto, K ;

Komatsu, S ;

Matsumoto, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :3120-3122

[7] Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition [J].

Sharda, T ;

Soga, T ;

Jimbo, T ;

Umeno, M .

[8] High quality diamond formation by electron temperature control in methane-hydrogen plasma [J].

Shimizu, T ;

Iizuka, S ;

Kato, K ;

Sato, N .

PLASMA SOURCES SCIENCE & TECHNOLOGY, 2003, 12 (04) :S21-S25

[9] Chemical vapour deposition of diamond on stainless steel: the effect of Ni-diamond composite coated buffer layer [J].

Sikder, AK ;

Sharda, T ;

Misra, DS ;

Chandrasekaram, D ;

Selvam, P .

[10]

Vazquez F. J. G., 2003, J APPL PHYS, V94, P6085

← 1 2 →