Single element photoconductive Hg0.79Cd0.21Te IR detector fabrications and their characteristics

被引：2

作者：

Kim, TH ^{[1
]}

Han, MS ^{[1
]}

Jeoung, MS ^{[1
]}

Kwon, JH ^{[1
]}

Yim, NS ^{[1
]}

Lee, GS ^{[1
]}

Kim, ET ^{[1
]}

Hahn, SR ^{[1
]}

Kwon, HC ^{[1
]}

Bin, Y ^{[1
]}

Jeoung, YT ^{[1
]}

Kim, JM ^{[1
]}

机构：

[1] Korea Elect Co Ltd, KEC Res Inst Technol, Semicond R&D Ctr, Kumi 730031, Kyungbuk Provin, South Korea

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2 | 1998年 / 3436卷

关键词：

Hg0.79Cd0.21Te (MCT); photoconductive single element IR detector; passivation layer; ohmic contact metals; device performance test;

D O I：

10.1117/12.328003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long wavelength infrared (LWIR) photoconductive (PC) detectors of single element Hg0.79Cd0.21Te (MCT) on sapphire substrate were fabricated, using three kinds of MCT etching processes, such as wet only, wet & dry mixed, and dry only process. The ohmic contact metals, which were used to the first contact layer in the IR detector fabrication, were Au, Ni, and Ti. The performance test of the fabricated IR detectors showed the good results in the wet etched MCT IR detectors with the detectivities (D*) of (1-3) x 10(10) cmHz(1/2)W(-1) and the responsivities of (2-3) x 10(4) VW-1 at field of view (FOV) of 180 degrees.

引用

页码：91 / 97

页数：7