Underlayer effect on magnetoresistance of top- and bottom-type spin valves

被引：9

作者：

Fujikata, J ^{[1
]}

Hayashi, K ^{[1
]}

Nakada, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Funct Devices Res Labs, Fuchu, Tokyo 183, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

关键词：

D O I：

10.1063/1.370078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of underlayers on top- and bottom-type spin valves with PtMn and NiO is investigated. For the top- type spin valves with PtMn, magnetoresistance (MR) ratios are enhanced by using Zr underlayers compared to those for Delta rho underlayers. The bottom-type spin valves with PtMn showed larger MR ratios than the top- type spin valves as the free layer thickness decreased. The improved giant magnetoresistance results mainly from the increased Dr due to the smoother interface for the spin valves. Spin valves with NiO underlayers showed smaller resistivity and an almost constant Delta rho for a wide range of free layer thicknesses. (C) 1999 American Institute of Physics. [S0021-8979(99)73908-3].

引用

页码：5021 / 5023

页数：3

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