Scanning tunneling microscopic study of boron-doped silicon nanowires

被引：72

作者：

Ma, DDD

Lee, CS

Lee, ST ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 15期

关键词：

D O I：

10.1063/1.1409276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped and undoped silicon nanowires (SiNWs). STM images clearly showed the presence of nanoparticle chains and nanowires in the B-doped SiNWs sample. Clear and regular nanoscale domains were observed on the SiNW surface, which were attributed to boron-induced surface reconstruction. STS measurements have provided current-voltage curves for SiNWs, which showed clearly enhancement in electrical conductivity by boron doping. (C) 2001 American Institute of Physics.

引用

页码：2468 / 2470

页数：3

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[1] Let there be light [J].