A numerical and experimental study on gap compensation and wavelength selection in UV-lithography of ultra-high aspect ratio SU-8 microstructures

被引:103
作者
Yang, R [1 ]
Wang, WJ [1 ]
机构
[1] Louisiana State Univ, Dept Mech Engn, Baton Rouge, LA 70803 USA
来源
SENSORS AND ACTUATORS B-CHEMICAL | 2005年 / 110卷 / 02期
基金
美国国家科学基金会;
关键词
Cargille refractive index matching liquid; ultra-thick SU-8 resist; diffraction; high aspect ratio; UV-lithography; MEMS;
D O I
10.1016/j.snb.2005.02.006
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper presents a study on UV-lithography of thick SU-8 resist using air gap compensation and optimal wavelength selection for ultra-high aspect ratio microstructures. Both numerical simulations and experiments were conducted to study effects of different lithography conditions: broadband light source with and without air gap compensation, filtered light source with glycerol liquid, and filtered light source with Cargille refractive index matching liquid. A thick PMMA sheet was used as an optical filter to eliminate most of the i-line components of a broadband light source. Using the filtered light Source and gap compensation with the Cargille refractive index liquid perfectly matching that of SU-8, patterns with feature sizes of 6 mu m thick, 1150 mu m tall (aspect ratio of more than 190: 1) and high quality sidewalls were obtained. Microstructures with height up to 2 mm and good sidewall quality were also obtained and presented. The study also proved that Cargille refractive index matching liquid is compatible with UV-lithography of SU-8 and may be used as an effective air gap compensation solution. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:279 / 288
页数:10
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