Gamma ray spectrometers fabricated from Modified Bridgman annealed CZT crystal material

被引：7

作者：

Chattopadhyay, K ^{[1
]}

Chen, H ^{[1
]}

Chen, KT ^{[1
]}

Burger, A ^{[1
]}

Flint, JP ^{[1
]}

Glass, HL ^{[1
]}

James, RB ^{[1
]}

机构：

[1] Fisk Univ, Ctr Photon Mat & Devices, Nashville, TN 37208 USA

来源：

SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷

关键词：

D O I：

10.1557/PROC-487-123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The CZT boule was grown by a modified Vertical Bridgman process using in-situ compounding, Cd over-pressure and a pyrolytic boron nitride crucible within a fused ampoule. During growth, the Cd vapor pressure was near 1 atmosphere. These growth conditions tend to give high purity, good stoichiometry, few precipitates, and dislocation densities in the low to mid-10(4) cm(-2) range. The crystals, after polishing, were annealed in a nearly saturated Cd, Zn atmosphere to fill residual Cd-site vacancies and achieve high resistivity in the 10(10) Omega-cm range. Low temperature photoluminescence study shows very good crystalline quality and a very low concentration of deep level recombinations. Single crystal samples were diced into 1 cm squares for evaluation as gamma ray detectors. The best detector results (4.5 % resolution at 60 keV) were achieved for a 2 hour anneal at 850 degrees C.

引用

页码：123 / 128

页数：6