Semiconducting oxide heterostructures

被引：7

作者：

Brandt, Matthias ^{[1
]}

von Wenckstern, Holger ^{[1
]}

Stoelzel, Marko ^{[1
]}

Hochmuth, Holger ^{[1
]}

Lorenz, Michael ^{[1
]}

Grundmann, Marius ^{[1
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 01期

关键词：

ZNO THIN-FILMS; MOLECULAR-BEAM EPITAXY; 2-DIMENSIONAL ELECTRON-GAS; FIELD-EFFECT TRANSISTOR; STEP-FLOW GROWTH; QUANTUM CONFINEMENT; CRYSTALLOGRAPHIC POLARITY; SAPPHIRE SUBSTRATE; OPTICAL-PROPERTIES; AB-INITIO;

D O I：

10.1088/0268-1242/26/1/014040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of semiconducting oxide heterostructures are demonstrated using ZnO and its ternary alloy MgxZn1-xO as a model system. This system is of particular importance, as it shows by far the most detailed research activities among oxide semiconductors. MgxZn1-xO can be grown pseudomorphically on single crystalline ZnO in the step flow growth mode yielding atomically flat surfaces. In such structures, a two-dimensional electron gas was detected with an areal concentration of up to n(2d) = 3.9 x 10(13) cm(-2). The quantum Hall effect was observed in ZnO/MgxZn1-xO single heterostructures, the first oxide system ever to show the quantum Hall effect. Likewise, quantization plays a dominating role in double heterostructures of ZnO and MgxZn1-xO. Quantum confinement and the quantum-confined Stark effect were observed in ZnO/MgxZn1-xO quantum wells grown by MBE and also by PLD. Finally, the ability to induce and control quantized states in ZnO/MgxZn1-xO heterostructures was combined with the extraordinary properties of one-dimensional nanostructures, thus resulting in nano-sized building blocks.

引用

页数：9

共 101 条

[31] Lineshape theory of photoluminescence from semiconductor alloys [J].

Grundmann, Marius ;

Dietrich, Christof P. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

[32] Time-resolved spectroscopy of excitonic transitions in ZnO/(Zn, Mg)O quantum wells [J].

Guillet, T. ;

Bretagnon, T. ;

Taliercio, T. ;

Lefebvre, P. ;

Gil, B. ;

Morhain, C. ;

Tang, Xiaodong .

SUPERLATTICES AND MICROSTRUCTURES, 2007, 41 (5-6) :352-359

[33] Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer [J].

Gunji, R. Y. ;

Nakano, M. ;

Tsukazaki, A. ;

Ohtomo, A. ;

Fukumura, T. ;

Kawasaki, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[34] POLARE EIGENSCHAFTEN VON ZINKOXYD-KRISTALLEN [J].

HEILAND, G ;

PFISTER, H ;

KUNSTMANN, P .

ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04) :485-&

[35] POLAR SURFACES OF ZINC OXIDE CRYSTALS [J].

HEILAND, G ;

KUNSTMANN, P .

SURFACE SCIENCE, 1969, 13 (01) :72-+

[36]

Heitsch S, 2006, P MRS, V957, pK07

[37]

Hirschwald W, 1981, CURRENT TOPICS MAT S, V7, P145

[38] Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates [J].

Hong, SK ;

Hanada, T ;

Ko, HJ ;

Chen, Y ;

Yao, T ;

Imai, D ;

Araki, K ;

Shinohara, M .

APPLIED PHYSICS LETTERS, 2000, 77 (22) :3571-3573

[39] Persistent step-flow growth of strained films on vicinal substrates [J].

Hong, W ;

Lee, HN ;

Yoon, M ;

Christen, HM ;

Lowndes, DH ;

Suo, ZG ;

Zhang, ZY .

PHYSICAL REVIEW LETTERS, 2005, 95 (09)

[40] Quantum confinement effect in ZnO/Mg0.2Zn0.8O multishell nanorod heterostructures -: art. no. 023102 [J].

Jang, ES ;

Bae, JY ;

Yoo, J ;

Park, WI ;

Kim, DW ;

Yi, GC ;

Yatsui, T ;

Ohtsu, M .

APPLIED PHYSICS LETTERS, 2006, 88 (02) :1-3

← 1 2 3 4 5 6 7 8 9 10 →