CMOS MEMS technology and CAD: The case of thermal microtransducers

被引：6

作者：

Baltes, H ^{[1
]}

Brand, O ^{[1
]}

Paul, O ^{[1
]}

机构：

[1] ETH Zurich, Phys Elect Lab, CH-8093 Zurich, Switzerland

来源：

SMART STRUCTURES AND MATERIALS 1998: SMART ELECTRONICS AND MEMS | 1998年 / 3328卷

关键词：

CMOS microsensor; micromachining; thermal sensor; infrared sensor; flow sensor; position sensor; chemical sensor; thermal CMOS material properties;

D O I：

10.1117/12.320157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermally-based transducer microsystems can be made by using CMOS IC technology, post-CMOS micromachining or deposition, and flip-chip packaging. Technology steps, materials, and physical effects pertinent to thermal microtransducers are summarized together with microheater, thermistor, thermopile, thermal isolation, and heat sink structures. An infrared intrusion detector, a thermal air flow sensor, and thermally excited microresonators for acoustic and chemical sensing serve as demonstrators. We discuss the characterization of process-dependent properties of CMOS materials crucial for thermal microtransducer CAD.

引用

页码：2 / 12

页数：11