Progress in 193 nm top surface imaging process development

被引：20

作者：

Hutchinson, J ^{[1
]}

Rao, V ^{[1
]}

Zhang, GJ ^{[1
]}

Pawloski, A ^{[1
]}

Fonseca, C ^{[1
]}

Chambers, J ^{[1
]}

Holl, S ^{[1
]}

Das, S ^{[1
]}

Henderson, C ^{[1
]}

Wheeler, D ^{[1
]}

机构：

[1] Intel Corp, Santa Clara, CA 95052 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XV, PTS 1 AND 2 | 1998年 / 3333卷

关键词：

lithography; 193; nm; top-surface imaging; photoresist materials;

D O I：

10.1117/12.312405

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The maturity and acceptance of top surface imaging (TSI) technology has been hampered by several factors including inadequate resist sensitivity and silylation contrast, defects and line edge roughness (LER) and equipment performance/reliability issues. We found that the use of a chemically amplified resist can improve the sensitivity by a factor of 1.5-2X, without compromising line edge roughness. While the post-silylation contrast of this chemically amplified material is poor (gamma < 1), the post-etch contrast is excellent (gamma much greater than 10) and the use of advanced silylation chemistries (disilanes) can further reduce the dose-to-size and increase the contrast. We have also demonstrated that using sulfur dioxide in the plasma etch process can improve the sidewall passivation of the resist lines, thus reducing the overall line edge roughness. Finally, we have been able to successfully use the TSI process to pattern deep sub-micron polysilicon and metal patterns.

引用

页码：165 / 175

页数：3