First-principles calculations of carrier-doping effects in SrTiO3 -: art. no. 174107

Carrier-doping effects on the structural phase transitions in SrTiO3 are investigated by the first-principles calculations. It is found that the instabilities of the cubic phase to both the TiO6-octahedron rotated phase and the ferroelectric phase are modulated characteristically by the electron doping and the hole doping. The results of the calculations are consistent with a previous experiment in which carrier electrons were introduced by impurity doping, and with another experiment where carriers were doped in (SrTiO3)-O-18 by photo-irradiation. The modulations of the instabilities are explained by a simple and intuitive mechanism.