Grain boundary migration in Fe-Si alloy bicrystals

被引:11
作者
Tsurekawa, S [1 ]
Nakashima, H
机构
[1] Tohoku Univ, Grad Sch Engn, Dept Machine Intelligence & Syst Engn, Sendai, Miyagi 9808579, Japan
[2] Kyushu Univ, Grad Sch Engn, Dept Molec & Mat Sci, Kasuga, Fukuoka 8168580, Japan
来源
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98 | 1999年 / 294-2卷
关键词
grain boundary migration; Fe-3%Si alloy; solute drag; grain boundary diffusion; misorientation;
D O I
10.4028/www.scientific.net/MSF.294-296.629
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Migrations of <110> tilt boundaries in Fe - Si alloy bicrystals have been investigated by Sun and Bauer technique as a function of misorientation angle, driving force, temperature and Si content. Two distinct regions with different migration behaviour are observed on temperature dependence of mobility: a drastic change in mobility occurs at a critical temperature. The critical temperature depends on the driving force and also the grain boundary (GB) character. The activation energy for grain boundary migration (GBM) is ca. 2/3 of that for Fe bulk self - diffusion in the higher temperature region, suggesting that the boundary motion is governed by GB diffusion. On the other hand, the activation energy increases up to ca. 220 kJ/mol in the lower temperature region, being in agreement with that for Si intrinsic - diffusion in alpha-Fe. This agreement shows that GB is most likely to move dragging Si atmosphere. Also, it is of great interest that the mobility for coincidence boundary, particularly Sigma 9 GB, is higher than that for a random boundary in the lower temperature region, but reverse is the case in the higher temperature region. In addition, the mobility depends on Si content in the lower temperature region; it increases with decreasing Si content, whereas such dependence is scarcely observed in the higher temperature region. These results obtained here will be discussed from the viewpoint of the interaction between GB and solute atoms.
引用
收藏
页码:629 / 632
页数:4
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