Reducing the grain size for fabrication of nanocrystalline diamond films

被引:47
作者
Jiang, N
Sugimoto, K
Eguchi, K
Inaoka, T
Shintani, Y
Makita, H
Hatta, A
Hiraki, A
机构
[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan
[2] Kochi Univ Technol, Tosayamada, Kochi 7828502, Japan
关键词
nanocrystalline diamond film; MPECVD; bias growth; grain size; TEM; field emission;
D O I
10.1016/S0022-0248(00)00972-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Microwave plasma-enhanced chemical-vapor-deposited (MPECVD) diamond films grown under various bias conditions applied to the substrates have been examined by electron microscopy.. It is noticed that in a certain range, increasing the bias voltage can effectively reduce the diamond grain size. Transmission electron microscopy (TEM) images distinctly reveal that the diamond films consisting of ultrafine crystallites of about 7-10 nm can be successfully fabricated by applying an appropriate bias voltage. Comparing the conventional diamond films deposited without, bias: and the nanocrystalline diamond films grown with a bias, one can see that the latter have better field emission properties. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:591 / 594
页数:4
相关论文
共 12 条
[1]   Nano-diamond films produced from CVD of camphor [J].
Chakrabarti, K ;
Chakrabarti, R ;
Chattopadhyay, KK ;
Chaudhuri, S ;
Pal, AK .
DIAMOND AND RELATED MATERIALS, 1998, 7 (06) :845-852
[2]   DEPOSITION AND CHARACTERIZATION OF NANOCRYSTALLINE DIAMOND FILMS [J].
GRUEN, DM ;
PAN, XZ ;
KRAUSS, AR ;
LIU, SZ ;
LUO, JS ;
FOSTER, CM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1491-1495
[3]   EARLY FORMATION OF CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS [J].
IIJIMA, S ;
AIKAWA, Y ;
BABA, K .
APPLIED PHYSICS LETTERS, 1990, 57 (25) :2646-2648
[4]   Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods [J].
Jiang, N ;
Kujime, S ;
Ota, I ;
Inaoka, T ;
Shintani, Y ;
Makita, H ;
Hatta, A ;
Hiraki, A .
JOURNAL OF CRYSTAL GROWTH, 2000, 218 (2-4) :265-271
[5]  
Jiang X., 1999, P 5 INT C APPL DIAM, P28
[6]   Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasma-enhanced chemical vapor deposition on silicon substrates [J].
Lee, JC ;
Hong, BY ;
Messier, R ;
Collins, RW .
APPLIED PHYSICS LETTERS, 1996, 69 (12) :1716-1718
[7]  
PROFFITT SS, 1999, DIAM RELAT MATER, V8, P771
[8]   PHYSICAL-PROPERTIES OF THIN-FILM FIELD-EMISSION CATHODES WITH MOLYBDENUM CONES [J].
SPINDT, CA ;
BRODIE, I ;
HUMPHREY, L ;
WESTERBERG, ER .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5248-5263
[9]   SYNTHESIS AND CHARACTERIZATION OF FINE-GRAIN DIAMOND FILMS [J].
WU, RLC ;
RAI, AK ;
GARSCADDEN, A ;
KEE, P ;
DESAI, HD ;
MIYOSHI, K .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) :110-116
[10]  
ZHOU D, 1997, J APPL PHYS, V82, P4547