Intrinsic spin hall effect in the two-dimensional hole gas

被引:138
作者
Bernevig, BA [1 ]
Zhang, SC [1 ]
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
关键词
D O I
10.1103/PhysRevLett.95.016801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that two types of spin-orbit coupling in the 2 dimensional hole gas, with and without inversion symmetry breaking, contribute to the intrinsic spin-Hall effect. Furthermore, the vertex correction due to impurity scattering vanishes in both cases, in sharp contrast to the case of usual Rashba coupling in the electron band. Recently, the spin-Hall effect in a hole doped GaAs semiconductor has been observed experimentally by Wunderlich et al. [Phys. Rev. Lett. 94, 047204 (2005).]. From the fact that the lifetime broadening is smaller than the spin splitting, and the fact impurity vertex corrections vanish in this system, we argue that the observed spin-Hall effect should be in the intrinsic regime.
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页数:4
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