Decrease in gap states at ultrathin SiO2/Si interfaces by crown-ether cyanide treatment

被引：34

作者：

Kobayashi, H

Asano, A

Takahashi, M

Yoneda, K

Todokoro, Y

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Matsushita Elect Corp, ULSI Proc Technol Dev Ctr, Minami Ku, Kyoto 6018413, Japan

[3] Matsushita Elect Corp, Dev Planning Dept Grp, Minato Ku, Tokyo 1058586, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期

关键词：

D O I：

10.1063/1.1332982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple method to passivate interface states at ultrathin SiO2/Si interfaces is developed. In this method, ultrathin SiO2-covered Si is immersed in a KCN solution containing crown-ether, followed by a rinse in water at 25 degreesC. The conductance-voltage measurements show that the interface state density is decreased to similar to1/10 by this crown-ether cyanide treatment. The capacitance-voltage measurements show that contamination by K+ ions is effectively avoided by the inclusion of crown-ether. These results demonstrate that crown-ether molecules effectively capture K+ ions and consequently CN- ions effectively may react with defect states, probably forming Si-CN bonds. The passivation of interface states by the cyanide treatment improves the electrical characteristics of metal-oxide-semiconductor tunneling diodes. (C) 2000 American Institute of Physics. [S0003-6951(00)04351-5].

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页码：4392 / 4394

页数：3

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