Effective Hamiltonian for Ga1-xMnxAs in the dilute limit -: art. no. 097202

被引：37

作者：

Fiete, GA ^{[1
]}

Zaránd, G

Damle, K

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60429 USA

[3] Budapest Univ Technol & Econ, Inst Phys Res, H-1521 Budapest, Hungary

[4] Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.91.097202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We derive an effective Hamiltonian for Ga1-xMnxAs in the dilute limit, where Ga1-xMnxAs can be described in terms of spin F=3/2 polarons hopping between the Mn sites and coupled to the local Mn spins. We determine the parameters of our model from microscopic calculations. Our approach treats the large Coulomb interaction in a nonperturbative way, captures the effects of spin-orbit coupling and disorder, and is appropriate for other p-doped magnetic semiconductors.

引用

页数：4

共 20 条

[1] Photoemission studies of Ga1-xMnxAs:: Mn concentration dependent properties -: art. no. 115319 [J].