High efficiency surface-emitting laser with subwavelength antireflection structure

被引：21

作者：

Vaissié, L ^{[1
]}

Smolski, OV ^{[1
]}

Mehta, A ^{[1
]}

Johnson, EG ^{[1
]}

机构：

[1] Coll Opt & Photon, Orlando, FL 32816 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 04期

关键词：

grating coupler; subwavelength structure; surface-emitting semiconductor laser;

D O I：

10.1109/LPT.2004.843259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a high efficiency tapered grating surface-emitting laser with an antireflection-structured (ARS) substrate. A 64% improvement of the device efficiency is obtained by monolithic integration of a sawtooth-shaped ARS on the GaAs substrate. Slope efficiencies of 0.82 W/A were measured at 975 nm in pulse pumping and are mainly limited by free-carrier absorption in the n-doped GaAs substrate. A maximum peak power of 25 W was obtained without coating the device's cleaved facet. The symmetry of the near-field intensity profile along the grating coupler is improved by varying the grating duty cycle from 20% to 55%.

引用

收藏

页码：732 / 734

页数：3

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