Epitaxial heterostructures of YBa2Cu3O7-delta/KTaO3 and YBa2Cu3O7-delta/BaxSr1-xTiO3 for tunable microwave components

被引:4
作者
Boikov, YA
Ivanov, ZG
Vasiliev, AL
Olsson, E
Claeson, T
机构
[1] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
[2] UNIV GOTHENBURG,S-41296 GOTHENBURG,SWEDEN
[3] RUSSIAN ACAD SCI,INST CRYSTALLOG,MOSCOW 117333,RUSSIA
关键词
D O I
10.1088/0953-2048/9/4A/045
中图分类号
O59 [应用物理学];
学科分类号
摘要
Heterostructures with a thin BaxSr1-xTiO3 or KTaO3 ferroelectric layer between two YBa2Cu3O7-delta superconducting films were laser deposited on a buffered Si-on-sapphire substrate. The top and bottom YBa2Cu3O7-delta films were well c-axis oriented and free from micro-cracks and had superconducting transitions T-c in the range 88-90 K. The dielectric permittivity, epsilon(r), and the high-frequency losses of epitaxially grown BaxSr1-xTiO3 and KTaO3 layers were measured in the temperature interval 15-300 K (f = 100 kHz).
引用
收藏
页码:A178 / A181
页数:4
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