Uniform threshold current, continuous-wave, singlemode 1300nm vertical cavity lasers from 0 to 70°C

被引:76
作者
Jayaraman, V [1 ]
Geske, JC [1 ]
MacDougal, MH [1 ]
Peters, FH [1 ]
Lowes, TD [1 ]
Char, TT [1 ]
机构
[1] Gore Photon, Lompoc, CA 93436 USA
关键词
D O I
10.1049/el:19980997
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors describe the first 1300 nm VCSELs which are compatible with commercial datacom performance requirements. These devices operate at CW up to 80 degrees C. The threshold current varies by only +/- 0.5 mA (+/- 10%) from 0 to 70 degrees C. The devices show > 0.38 mW singlemode output and < 2.8V operating from 0 to 70 degrees C. The same devices also demonstrate a 1.25 Gbit/s modulation speed.
引用
收藏
页码:1405 / 1407
页数:3
相关论文
共 4 条
[1]   WDM array using long-wavelength vertical cavity lasers [J].
Jayaraman, V ;
Kilcoyne, MK .
WAVELENGTH DIVISION MULTIPLEXING COMPONENTS, 1996, 2690 :325-336
[2]   Submilliamp long wavelength vertical cavity lasers [J].
Margalit, NM ;
Babic, DI ;
Streubel, K ;
Mirin, RP ;
Naone, RL ;
Bowers, JE ;
Hu, EL .
ELECTRONICS LETTERS, 1996, 32 (18) :1675-1677
[3]   Submilliamp 1.3μm vertical-cavity surface-emitting lasers with threshold current density of &lt;500A/cm2 [J].
Qian, Y ;
Zhu, ZH ;
Lo, YH ;
Huffaker, DL ;
Deppe, DG ;
Hou, HQ ;
Hammons, BE ;
Lin, W ;
Tu, YK .
ELECTRONICS LETTERS, 1997, 33 (12) :1052-1054
[4]   Continuous-wave operation up to 36 degrees C of 1.3-mu m GaInAsP-InP vertical-cavity surface-emitting lasers [J].
Uchiyama, S ;
Yokouchi, N ;
Ninomiya, T .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (02) :141-142