Improvement of electrical yield in the fabrication of CIGS-based thin-film modules

被引:37
作者
Kushiya, K [1 ]
机构
[1] Showa Shell Sekiyu KK, Cent R&D Lab, ARL, Kanagawa, Japan
关键词
thin-film solar cell; Cu(InGa)Se-2-based thin-film modules; selenization; processing yield; process control; LBIC technique;
D O I
10.1016/S0040-6090(00)01834-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gradually moving toward the micro (or primitive) pilot-production stage from the R&D stage, an attempt to improve yield as well as efficiency on 30 x 30-cm-sized CIGS-based circuits is carried out. Applying the LBIC mapping technique to the analysis of CIGS-based circuits, the CIGS-based absorber formation and Zn(O,S,OH)(x) buffer deposition stages in the baseline process are mainly adjusted and revised. Through trouble shooting on the current baseline process, the champion efficiency is improved from 11.6 to 12.5% and the electrical yield of CIGS-based circuits over 10% efficiency is enhanced from 7 to 50%. Based upon the analysis of the results from the relatively large volume of CIGS-based circuits, it is recognized that reducing unnoticed or unexpected factors in the fabrication process for CIGS-based circuits is important to make the baseline process more robust and reproducible. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:257 / 261
页数:5
相关论文
共 13 条
[1]  
ALBIN D, 1991, P 22 IEEE PHOT SPEC, P907
[2]  
Contreras MA, 1999, PROG PHOTOVOLTAICS, V7, P311, DOI 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO
[3]  
2-G
[4]  
HAGIWARA Y, 1999, 11 INT PHOT SCI ENG, P83
[5]  
KARG F, 1999, 11 PVSEC, P627
[6]   Application of Zn-compound buffer layer for polycrystalline CuInSe2-based thin-film solar cells [J].
Kushiya, K ;
Nii, T ;
Sugiyama, I ;
Sato, Y ;
Inamori, Y ;
Takeshita, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (08) :4383-4388
[7]   Formation chemistry of polycrystalline Cu(InGa)Se-2 thin-film absorbers prepared by selenization of Cu-Ga/In stacked precursor layers with H2Se gas [J].
Kushiya, K ;
Kuriyagawa, S ;
Kase, T ;
Sugiyama, I ;
Tachiyuki, M ;
Takeshita, H .
THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, 1996, 426 :177-182
[8]  
KUSHIYA K, 1999, 11 PVSEC, P637
[9]  
Kushiya K., 1996, P 25 IEEE PHOT SPEC, P989
[10]   AGGREGATE STRUCTURE IN CUINSE2/MO CUGASE2/MO FILMS - ITS RELATION TO THEIR ELECTRICAL-ACTIVITY [J].
MARGULIS, L ;
HODES, G ;
JAKUBOWICZ, A ;
CAHEN, D .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3554-3559