Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate

被引：46

作者：

Gao, J.

Xu, J. B. ^{[1
]}

Zhu, M.

Ke, N.

Ma, Dongge

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Appl Chem, Changchun 130022, Jilin, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 18期

关键词：

D O I：

10.1088/0022-3727/40/18/022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.

引用

页码：5666 / 5669

页数：4

共 24 条

[1] Organic field-effect transistors with high mobility based on copper phthalocyanine [J].