Anomalous elastic response of silicon to uniaxial shock compression on nanosecond time scales

被引：177

作者：

Loveridge-Smith, A

Allen, A

Belak, J

Boehly, T

Hauer, A

Holian, B

Kalantar, D

Kyrala, G

Lee, RW

Lomdahl, P

Meyers, MA

Paisley, D

Pollaine, S

Remington, B

Swift, DC

Weber, S

Wark, JS

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[3] Univ Rochester, Laser Energet Lab, Rochester, NY 14620 USA

[4] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[5] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.86.2349

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have used x-ray diffraction with subnanosecond temporal resolution to measure the: lattice parameters of orthogonal planes in shock compressed single crystals of silicon (Si) and copper (Cu). Despite uniaxial compression along the (400) direction of Si reducing the lattice spacing by nearly 11%, no observable changes occur in planes with normals orthogonal to the shock propagation direction; In contrast, shocked Cu shows prompt hydrostaticlike compression. These results are consistent with simple estimates of plastic strain rates based on dislocation velocity data.

引用

页码：2349 / 2352

页数：4

共 21 条

[1] Intrinsic mobility of a dissociated Dislocation in silicon [J].