Two disordered phases of the β-tin structure in binary semiconductors

被引:3
作者
Ackland, GJ [1 ]
机构
[1] Univ Edinburgh, Dept Phys & Astron, Edinburgh EH9 3JZ, Midlothian, Scotland
关键词
D O I
10.1103/PhysRevLett.86.5301
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The Ising model on a P-tin structure has a phase diagram containing three distinct phases involving order, disorder, and a frustrated ordering. The x-ray crystallographic observation that no ordered P-tin phases exist at room temperature in compound semiconductors may indicate either "paramagnetic" (dynamic) or frustrated (static) disorder. Density functional pseudopotential calculations determine which regimes real materials fall into and predict that in materials such as GaSb, there may be two temperature-driven transitions between beta -tin structures: from ordered, to frustrated order, to disordered.
引用
收藏
页码:5301 / 5304
页数:4
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