Linear temperature dependence of conductivity in the apparent insulating regime of dilute two-dimensional holes in GaAs

被引：26

作者：

Noh, H ^{[1
]}

Lilly, MP

Tsui, DC

Simmons, JA

Pfeiffer, LN

West, KW

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.68.241308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing conductivity with decreasing temperature, is not observed when the conductivity is smaller than e(2)/h. We suggest that strong interactions in a regime close to the Wigner crystallization must be playing a role in the unusual transport.

引用

页数：4

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