Physical principles of the single-C60 transistor effect

被引：93

作者：

Joachim, C

Gimzewski, JK

Tang, H

机构：

[1] CNRS, CEMES, F-31055 Toulouse, France

[2] IBM Corp, Div Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.58.16407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Starting with the physics of tunneling transport through a molecule, we describe the principles underlying electrical amplification effects of a C-60 molecule. We discuss in detail the consequences of intramolecular electronic-level repulsion, an effect induced by compression of the molecule, which leads to an exponential variation of the current for a minute compression of the molecule. This detailed understanding underpins the Cao amplifier. Using a planar configuration and an independent electromechanical grid, a transistor effect results from this repulsion effect. [S0163-1829(98)07448-7].

引用

页码：16407 / 16417

页数：11

共 36 条

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