Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays

被引:110
作者
Chen, Hou-Tong [1 ]
Lu, Hong [2 ]
Azad, Abul K. [1 ]
Averitt, Richard D. [3 ]
Gossard, Arthur C. [2 ]
Trugman, Stuart A. [1 ]
O'Hara, John F. [1 ]
Taylor, Antoinette J. [1 ]
机构
[1] Los Alamos Natl Lab, MPA CINT, Los Alamos, NM 87545 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Boston Univ, Dept Phys, Boston, MA 02215 USA
关键词
D O I
10.1364/OE.16.007641
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance enhanced terahertz transmission. Our proof of principle device achieves an intensity modulation depth of 52% by changing the voltage bias between 0 and 16 volts. Further optimization may result in improvement of device performance and practical applications. This approach can be also translated to the other optical frequency ranges. (C) 2008 Optical Society of America.
引用
收藏
页码:7641 / 7648
页数:8
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