Scintillation performance of large Ce-doped Gd2SiO5 (GSO) single crystal

被引：40

作者：

Ishibashi, H ^{[1
]}

Kurashige, K

Kurata, Y

Susa, K

Kobayashi, M

Tanaka, M

Hara, K

Ishii, M

机构：

[1] Hitachi Chem Co Ltd, Tsukuba, Ibaraki, Japan

[2] KEK, High Energy Accelerator Res Org, Tsukuba, Ibaraki, Japan

[3] Univ Tsukuba, Tsukuba, Ibaraki 305, Japan

[4] Shonan Inst Technol, Fujisawa, Kanagawa, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期

关键词：

D O I：

10.1109/23.682439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single crystal Ce-doped Gd2SiO5 (GSO) has a good balance of scintillation properties such as high density, intense light output, and short decay time, and also has an excellent temperature response and excellent radiation hardness. We studied causes for cracks in single-crystal GSO which have been a major problem in GSO growth, and tried to optimize the growth conditions by using a two-zone furnace which reduced thermal gradient. We were thus able to grow a crack-free single-crystal of GSO that was SO mm in diameter and 280 mm long. Specimens with 20 x 20 x 200 mm(3) sampled from the large GSO boules with 0.5 and 1.5 mol% Ce have been evaluated for high energy physics application.

引用

页码：518 / 521

页数：4

共 8 条

[1]

FICKE DC, 1996, 1994 IEEE NSS MIC, V2, P1859

[2]

Ishibashi H., 1993, P CRYSTAL 2000 INT W, P389

[3] A BEAM TEST ON A FAST EM-CALORIMETER OF GADOLINIUM SILICATE, GSO(CE) [J].