Some physical properties of chalcopyrite and orthorhombic AgInS2 thin films prepared by spray pyrolysis

被引：41

作者：

Aguilera, MLA ^{[1
]}

Ortega-López, M

Resendiz, VMS

Hernández, JA

Trujillo, MAG

机构：

[1] IPN, CINVESTAV, Dept Ingn Elect, SEES, Mexico City, DF, Mexico

[2] UPALM, ESFM, IPN, Mexico City 07738, DF, Mexico

[3] UPALM, ESCOM, IPN, Mexico City 07738, DF, Mexico

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 102卷 / 1-3期

关键词：

chalcopyrite; orthorhombic; silver indium sulfide; structural and optical properties;

D O I：

10.1016/S0921-5107(02)00626-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AgInS2 thin films were prepared by spray pyrolysis of an alcoholic solution of silver acetate, indium chloride and thiourea. The samples were grown at substrate temperatures of 375 and 400 degreesC from a spray solution in which the silver to indium molar ratio ([Ag]/[In]) was varied in the range 0.5-1.625. The AgInS2 chalcopyrite phase and its orthorhombic modification were found to be predominant ones in the films grown from solutions with, [Ag]/[In] = 0.87-1.6 and 0.87, respectively. The Ag2S, In2S3 and AgIn5S8 secondary phases we're found to present in sprayed films. Estimated optical gap energies were 1.88 and 2.03 eV for chalcopyrite AgInS2 and 1.98 eV for orthorhombic AgInS2. All deposited films exhibited n-type conduction and a room temperature resistivity in the range 10(3)-10(6) Omega M. (C) 2003 Published by Elsevier B.V.

引用

页码：380 / 384

页数：5

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