Bandwidth dependence of insulator-metal transitions in perovskite cobalt oxides

被引:154
作者
Yamaguchi, S
Okimoto, Y
Tokura, Y
机构
[1] Department of Applied Physics, University of Tokyo
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 16期
关键词
D O I
10.1103/PhysRevB.54.R11022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Insulator-metal transitions and related electronic structures have been investigated for single crystals of perovskite-type cobalt oxides RCoO(3) (R=La, Pr, Nd, Sm, Eu, and Gd) with R-dependent variation of one-electron bandwidth (W). All the compounds exhibit the insulating ground state but undergo gradual insulator-metal (I-M) transitions at 500-700 K. Systematic variation of the I-M transition temperatures (T-IM) as well as the thermal and optical charge gaps in the insulating phase have been observed with change of R species (or equivalently W). Anomalously low T-IM as compared with the charge gap in each RCoO(3) suggests that the I-Ari transition should be viewed as a thermally induced Mott transition.
引用
收藏
页码:11022 / 11025
页数:4
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