Oxide confined 2D VCSEL arrays for high-density inter/intra-chip interconnects

被引：21

作者：

King, R ^{[1
]}

Michalzik, R ^{[1
]}

Jung, C ^{[1
]}

Grabherr, M ^{[1
]}

Eberhard, F ^{[1
]}

Jager, R ^{[1
]}

Schnitzer, P ^{[1
]}

Ebeling, KJ ^{[1
]}

机构：

[1] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS II | 1998年 / 3286卷

关键词：

semiconductor laser arrays; surface-emitting lasers; optical interconnections; integrated circuit interconnections;

D O I：

10.1117/12.305445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed and fabricated 4 x 8 vertical-cavity surface-emitting laser (VCSEL) arrays intended to be used as transmitters in short-distance parallel optical interconnects. In order to meet the requirements of two-dimensional (2D), high-speed optical links, each of the 32 laser diodes is supplied with two individual top contacts. The metalization scheme allows flip-chip mounting of the array modules junction-side down on silicon complementary metal oxide semiconductor (CMOS) chips. The optical and electrical characteristics across the arrays with device pitch of 250 mu m are quite homogeneous. Arrays with 3 mu m, 6 mu n and. 10 mu m active diameter Iasers have been investigated. The small devices show threshold currents of 600 mu A, single-mode output powers as high as 3 mW and maximum wavelength deviations of only 3 nm. The driving characteristics of all arrays are fully compatible to advanced 3.3 V CMOS technology. Using these arrays, we have measured small-signal modulation bandwidths exceeding 10 GHz, and transmitted pseudo random data at 8 Gbit/s per channel over 500 m graded index multimode fiber. This corresponds to a data transmission rate of 256 Gbit/s per array of I x 2 mm(2) footprint area.

引用

页码：64 / 71

页数：8