High-temperature thermoelectric performance of heavily doped PbSe

被引:250
作者
Parker, David [1 ]
Singh, David J. [1 ]
机构
[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 03期
关键词
TRANSPORT; CARRIERS; FIGURE; MERIT;
D O I
10.1103/PhysRevB.82.035204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a model calculation, employing first-principles calculations as well as empirical data, which suggests that properly hole-doped bulk PbSe may show a Seebeck coefficient as high as 230 mu V/K, in a temperature regime in which the lattice thermal conductivity is rather small. It may therefore show a figure-of-merit ZT as high as 2 for temperatures of 1000 K. Heavily doped p-type PbSe may offer better thermoelectric performance than the sister material, optimized PbTe, for high-temperature applications such as power generation.
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页数:5
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